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SFH 309 P SFH 309 PFA
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
SFH 309 P SFH 309 PFA
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale
q Speziell geeignet fur Anwendungen im
Features
q Especially suitable for applications from
Bereich von 380 nm bis 1180 nm (SFH 309 P) und bei 880 nm (SFH 309 PFA) q Hohe Linearitat q 3 mm plane Plastikbauform im LED-Gehause q Gruppiert lieferbar Anwendungen
q Lichtschranken fur Gleich- und
380 nm to 1180 nm (SFH 309 P) and of 880 nm (SFH 309 PFA) q High linearity q 3 mm plane LED plastic package q Available in groups Applications
q Photointerrupters q Industrial electronics q For control and drive circuits
Wechsellichtbetrieb
q Industrieelektronik q "Messen/Steuern/Regeln"
Typ (*vorher) Type (*formerly) SFH 309 P SFH 309 PFA (*SFH 309 PF)
Bestellnummer Ordering Code Q62702-P245 Q62702-P246
Semiconductor Group
1
01.97
feof6445
feo06445
SFH 309 P SFH 309 PFA
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 100 260 Einheit Unit
Top; Tstg TS
C C
TS
300
C
VCE IC ICS Ptot RthJA
35 15 75 165 450
V mA mA mW K/W
Semiconductor Group
2
SFH 309 P SFH 309 PFA
Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Symbol Symbol SFH 309 P S max 860 Wert Value SFH 309 PFA 900 nm nm Einheit Unit
380 ... 1180 730 ... 1120
Bestrahlungsempfindliche Flache ( 240 m) A Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 25 V, E = 0
0.045 0.45 x 0.45 0.4 ... 0.8
0.045 0.45 x 0.45 0.4 ... 0.8
mm2 mm x mm mm
LxB LxW H
75 5.0 1 ( 200)
75 5.0 1 ( 200)
Grad deg. pF nA
CCE ICEO
Semiconductor Group
3
SFH 309 P SFH 309 PFA
Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 309 P: Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 20 A , Ee = 0.5 mW/cm2
Symbol Symbol
Wert Value
Einheit Unit
IPCE IPCE tr, tf
63 420 6
A A s
VCEsat
150
mV
Directional characteristics Srel = f ()
Semiconductor Group
4
SFH 309 P SFH 309 PFA
Relative spectral sensitivity, SFH 309 P Srel = f ()
Relative spectral sensitivity, SFH 309 PFA Srel = f ()
Photocurrent IPCE = f (Ee), VCE = 5 V
Total power dissipation Ptot = f (TA)
Photocurrent IPCE = f (VCE), Ee = Parameter
Dark current ICEO = f (VCE), E = 0
Dark current ICEO = f (TA), VCE = 25 V, E = 0
Capacitance CCE= f (VCE), f = 1 MHz, E = 0
Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V
Semiconductor Group
5

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